High-Performance
Material Solutions
PolyCrystal CVD Diamond Wafer
Product Description
Polycrystalline CVD diamond (PCD) plates provide excellent thermal management with high thermal conductivity, though slightly lower than single-crystal diamonds. They are ideal for use in heat sinks and spreaders in electronics, RF devices, and power systems.
Specifications & Tolerances
- Diameter: 10 mm to 100 mm
- Thickness: 300um & 500um
- Thermal conductivity: Up To 1800 W/mK
- Surface: As grown & polished
- Thickness Tolerance: +/- 5%
- Transmittance: up to 65%
Key Advantages
Thermal Conductivity
Superior heat dissipation, ideal for high-power electronics.
Low Expansion
Reduces stress between materials during temperature changes.
Chemical Stability
Resistant to oxidation and chemical reactions.
Wear Resistance
Ensures durability and long-lasting performance.
Radiation Resistance
Suitable for space and high-radiation environments.
Electrical Insulation
Useful in applications requiring thermal management.
Single Crystal CVD Diamond Plate
Product Description
Single-crystal CVD diamond plates offer superior thermal conductivity (up to 2200 W/m·K), making them ideal for heat dissipation in high-power electronics, lasers, RF devices, and semiconductors.
Specifications & Tolerances
- Edges: Laser Cut
- Face Orientation: 100
- Laser Kerf: 3°
- Lateral Tolerance: +0.2/-0 mm
- Side 1/2 Roughness: < 2 - 30 nm
- Thickness Tolerance: +/- 0.05 mm
- Thickness Dim: 0.3-0.5mm
Material Properties
Nitrogen concentration: < 5 ppb (Optional) N2 Controlled based on Requirements
Operational Advantages
Thermal Conductivity
Higher than polycrystalline, offering superior heat dissipation.
Isotropic Properties
Uniform thermal performance in all directions.
Thermal Stability
Performs well at extreme temperatures.
Electrical Insulation
Non-conductive, useful in electronic devices.
Minimal Defects
Ensures higher reliability and efficiency.
Durability
Resistant to wear and chemical exposure.
Ultra-High Purity Epi Layer on SCD
Product Classification
Ultra-High Purity 30 to 50 μm Epitaxial Layer on Single Crystal Diamond.
Specifications & Tolerances
- Boron concentration: < 5 ppb
- Surface roughness: < 2 nm
- Nitrogen concentration: < 5 ppb
- Orientation: Typically (100)
Target Applications
- High-frequency & high-power devices
- Optical windows with ultra-low absorption
- Quantum optics: NV centre stability
- Ultrafast photodetectors
Key Industries
- Quantum Photonics
- Laser & LIDAR Systems
- High-Frequency RF/Power Electronics
- Advanced Sensor Technologies
Boron Doped SCD Diamond
Specifications & Tolerances
- Thickness: 0.3 mm – 1 mm
- Boron concentration: 1017–1021 atoms/cm3
- Orientation: (100)
- Electrical conductivity: Variable
- Resistivity: ~1 mΩ·cm
- Surface roughness: Polished ≤ 2nm
Applications
- Electrochemical sensors and electrodes
- Radiation-hardened electronics
- p-type semiconductor devices
Industries
- Harsh-Environment Electronics
- Diamond-based Transistors
- Electrochemical Sensing
Cu-Diamond Composite Material
Specifications & Tolerances
- Thermal conductivity: 500–700 W/m·K
- CTE tailored to match Si or GaN
- Thickness: 0.5 mm – 5 mm
- Surface: Lapped, Laser Cut
Applications
- High-power RF amplifier baseplates
- Space-grade thermal interface materials
- IGBT module heat sinks
- LED packaging
Industries
- Power Electronics
- Satellite and Defense Avionics
- Automotive EV Modules
- LED Packaging
Aluminium-Diamond Composite Plates
Specifications & Tolerances
- Diamond volume: 30–50%
- Thermal conductivity: 350–500 W/m·K
- CTE matched with Si or GaAs
- Surface: Lapped, Laser Cut
- Thickness: 0.3 mm – 10 mm
Applications
- Heat spreaders in telecom and radar
- Optoelectronic devices thermal management
- Laser diode mounting
- LED arrays
Industries
- Telecom Infrastructure
- Medical Lasers
- Consumer Electronics
- Aerospace Electronics
GaN Bonded on PCD Wafer (4-inch)
Specifications & Tolerances
- PCD wafer: 2-4 inch, 300–500 μm thick
- GaN layer: Transferred or bonded
- Bonding method: Plasma-assisted
- Interface resistance: Minimized
Applications
- GaN-on-Diamond HEMTs
- GaN LEDs with enhanced heat dissipation
- Pulsed RF Power Amplifiers
- MMICs
Industries
- RF & Microwave
- High-Speed Switching Systems
- Space-grade Electronics
- Defence Electronics
GaN on Diamond
Specifications & Tolerances
- GaN thickness: 0.5 μm – 5 μm
- Substrate: SCD (100) or (111)
- Interface: Buffer layer (AlN/AlGaN)
- Quality: Low dislocation density
- Thermal resistance: Ultra-low (< 0.1 K/W)
Applications
- GaN HEMTs with high power density
- Next-gen radar & comm systems
- RF and 5G devices
- Thermal management-critical devices
Industries
- Wireless Communications
- 5G Infrastructure
- Military Radar
- High-Power Electronics